A new chipscale p-channel power MOSFET that is said to offer the industry’s lowest on-resistance of any such device with a footprint area under 3 square mm has been released by Siliconix.
Aimed at battery switch, power amplifier, load switch, and charger applications, the new Micro Foot Si8413DB reportedly delivers maximum on-resistance of just 48 milliohms at a 4.5-V gate drive, a 31% improvement over the next-best such competing chipscale MOSFET on the market. Maximum on-resistance at a 2.5-V gate drive is a low 63 milliohms. Breakdown voltage for the new device is -20 V.
Measuring 1.54 mm by 1.54 mm by 0.62 mm high, the Si8413DB is said to deliver comparable performance to devices in the much larger TSOP-6 package while occupying a quarter of the space. When used in PDAs, cell phones, pagers, and other portable electronics, the new Micro Foot device gives designers the opportunity to make their end product smaller and thinner, to add more features, and/or to extend run times between battery charges.
Vishay Siliconix Micro Foot devices use a solder bump process along with proprietary techniques developed at Siliconix to eliminate the need for an outer package to encase the power MOSFET die, greatly reducing the size of the devices required to switch power and analogue signals in cell phones and other handheld electronic systems.
As the latest product in the Micro Foot family, the Si8413DB offers a respective 17% and 31% improvement in maximum on-resistance compared with the previously released Si8411DB and Si8401DB.
Samples and production quantities of the Si8413DB are available now, with lead times of 12 weeks for larger orders.