IMEC , the European microelectronics R&D centre, is developing a 0.18-micron Silicon Germanium (SiGe)-based BiCMOS process technology with National Semiconductor.
Targeted at low power applications, the joint process development with IMEC will enable National Semiconductor to offer a 0.18-micron SiGe-based BiCMOS process by December 2003 for its South Portland, ME manufacturing facility.
In the second phase of the four-year frame contract, IMEC and National Semiconductor plan to develop a next-generation SiGe-based BiCMOS technology that is targeted for the first half of 2005. This will also be demonstrated at National’s Maine facility.
Since January 2002, IMEC and National have been jointly developing a 0.18-micron SiGe HBT (hetero-junction bipolar transistor) module for integration into National’s existing high speed BiCMOS process family. Under terms of the non-exclusive agreement, IMEC will license the module to National along with the test chip structures and bipolar model.
National will integrate the SiGe HBT module into its existing 0.18-micron CMOS process without changes to the CMOS performance. A suite of radio frequency (RF) passive components such as spiral inductor, varactor, metal-insulator-metal (MIM) capacitor and poly-silicon resistors will also be integrated into the process.
The present version of the integrated 0.18-micron HBT module under development reaches an Ft x BVceo product exceeding 200, with 40% increase of Ft at low-current densities. The peak Fmax exceeds 100 GHz.
‘The process is being further optimised to achieve the best trade-off between peak Ft, low current Ft and minimum noise figure,’ said Mohan Yegnashankaran, Senior Vice President of Worldwide Product Development at National Semiconductor.