Cypress Semiconductor, Infineon Technologies and Micron Technology have announced that samples of their 32 Megabit CellularRAM devices are now available in both asynchronous and burst modes.
Last year, the three companies formed an agreement to co-develop specifications for CellularRAM products – a new generation of low-power pseudo-static RAM (PSRAM). The devices are designed to meet the demands of future 2.5G and 3G handset designs by offering a lower cost/bit ratio than current solutions.
CellularRAM devices incorporate several low-power features and are drop-in compatible with asynchronous low-power SRAMs currently used in cell phone designs because they have the same voltage range, package, and ball assignment.
In addition to 32Mb density components, the companies plan 16Mb and 64Mb density components too. Micron is currently sampling 32Mb and 64Mb devices, with full production expected in the third quarter of 2003. Infineon is currently sampling a 32Mb device, with full production expected in the third quarter of 2003. Cypress plans to have samples available in the first half of 2004.
The 32Mb CellularRAM samples currently available operate at up to 104 MHz clock rates with a latency of 70ns. They can achieve up to 208 MB/s (1.5 Gb/s) of peak bandwidth. These devices emulate popular standard burst READ and WRITE modes including the Intel W18 and Micron Flash Burst-compatible protocols.
The 32Mb samples are organised as 2 M x 16. The 16Mb and 64Mb density components are organised as 1 M x 16 and 4 M x 16.
The companies are jointly working on the definition of the next generation of the CellularRAM product family – a 128Mb device – which should be sampling in the second half of 2004.