Chlorine gas deposition

An innovative metal film deposition technology that applies high-density plasma using only chlorine gas has recently been commercialised by Mitsubishi Heavy Industries and Technology Alliance Investment.



The technology, called MCR-CVD (Metal Chloride Reduction Chemical Vapour Deposition), is said to be a simpler system compared to other semiconductor manufacturing technology, enabling simplified operation and maintenance.



With MCR-CVD, wires and transistor electrodes are formed on LSI wafers utilising chemical reduction action by chloride plasma. Compared to other manufacturing technologies, MCR-CVD is superior in embedding and is expected to largely eliminate complicated pre-and post-processes that affect LSI production costs.



MHI developed the MCR-CVD technology in late 2002. The company then launched development of a commercial-use system while simultaneously applying for domestic and international patents for 46 basic technologies.



PhyzChemix Corporation, a wholly owned subsidiary established by TAI in Tokyo last year, will commercialise the MCR-CVD technology. Until now PCX has been working toward commercialisation of MCR-CVD technology under intellectual properties licensed from MHI, but now the company will aim for more effective and faster commercialisation by further concentrating business resources related to the technology into the company.



To operate PCX, TAI will not only provide human resources and funds but also handle work consignment and coordination of tie-ups. MHI will concentrate its human resources, intellectual properties and facilities related to MCR-CVD technology into PCX.



MHI will also continue to cooperate in PCX’s research and development activities with respect to human resources and testing and evaluation facilities, leveraging its strength as a company comprehensively conducting all aspects of manufacturing activities.


PCX, capitalised at 310 million yen, markets MCR-CVD technology-applied systems related to semiconductor manufacturing, including wiring and metal gate forming systems for LSIs as well as feed-through wiring for MEMS (micro-electro-mechanical systems) and multilayer LSI chips.