National Semiconductor has introduced a new dual gate driver that, it claims, offers the industry’s highest peak output current and unique negative-to-positive output voltage swing.
The part, the LM5110, with fast switching speeds – 14 nanosecond rise and fall times with 25 nanosecond propagation delay – has been designed to drive large power MOSFETs and low threshold synchronous rectifiers found in communication infrastructure power supplies, motor controls and uninterruptible power supply (UPS) systems.
‘The LM5110’s MOSFET/bipolar compound output circuitry permits rail-to-rail swing and output current 3x to 4x higher than competitive CMOS dual gate drivers. When combined with our LM5041 or LM5030 high-voltage pulse width modulation (PWM) controllers, the LM5110 provides a high-speed PWM and field effect transistor (FET) driver chipset solution for modern power converters with high-current, low-voltage outputs,’ said Paul Greenland, marketing director of National Semiconductor’s power management group.
The LM5110 is the industry’s first MOSFET driver offering split-supply capability to pull the gate below the source, so that low threshold MOSFETs are held in the OFF-state with design margin for drain to gate transients and threshold shift. In conventional single-supply applications with positive-only gate drive, the input reference pin of the LM5110 is simply connected to power ground.
The driver operates over a wide supply voltage range from 3.5 V to 14 V and have an integrated line under-voltage lockout (UVLO) circuit for safe and predictable operation when powering up / down or during power line transients.
Integrating new features onto the two unused pins of industry standard dual drivers, the LM5110 supplements the unique value of 5 A peak output currents with a shutdown pin and negative output drive capability to reliably control power MOSFETs in any situation. The LM5110’s dual drivers can also be connected in parallel for twice the output current, providing 10 A peak current for more demanding applications.
It is offered in three configurations: dual non-inverting (-1), dual inverting (-2) and one inverting and one non-inverting stage (-3). Electrical specifications are guaranteed over the industrial temperature range from -40 degrees C to +125 degrees C.
Available today, it is offered in either an SOIC-8 package or a 10-pin surface mounted LLP chip-scale package. It is priced at $0.65 each in 1,000 units.