Infineon Technologies and Micron Technology have signed an agreement to co-develop a new multi-generational family of Reduced Latency DRAM (RLDRAM) for high-performance memory applications.
The new memory devices will initially operate at data rates as high as 600Mbit/sec/pin while reducing latency to a fraction of competing architectures.
The companies claim that the internal memory architecture will provide ultra-fast random access and will close the gap between DRAM and SRAM.
Infineon and Micron intend to make RLDRAM a multi-sourced standard for high-performance memories in switches, routers and other high-bandwidth latency-sensitive applications.
Infineon and Micron will work together to ensure multiple sources for the new RLDRAMs by developing pin- and function-compatible products.