Mitsubishi Materials Silicon Corporation (MSIL) has been granted a license from IBM to manufacture and sell SIMOX-SOI (Separation by IMplantation of OXygen-Silicon-On-Insulator) wafers.
MSIL plans to make significant investments to bring the SOI-SIMOX technology to volume production levels using 200mm and 300mm wafers at its Noda plant site in Chiba prefecture, Japan.
SOI technology improves performance over bulk CMOS technology by 25 to 35%; equivalent to two years of bulk CMOS advances.
Mitsubishi expects that SOI will eventually replace bulk CMOS as the most commonly used substrate for advanced CMOS used in mainstream microprocessors, devices for hand-held systems and other emerging wireless electronic devices requiring low power.
MSIL produces and markets leading polished wafer and epitaxial wafer products and has sites in Japan, United States and Indonesia.