Toshiba Corporation has reinforced its line-up of CMOS image sensor ICs with a series of four high-sensitivity devices that, it claims, match the performance of charge-coupled devices (CCD).
The new devices incorporate a photodiode double the size of Toshiba’s current devices with double the sensitivity. This supports better performance in low light conditions, as does Toshiba’s success in cutting leakage current, an advance that cuts the dark signal voltage to one-third that of present CMOS image sensors.
Two of the devices are available with a pixel count of 330,000 and quarter inch lens size, while two other are available with a pixel count of 110,000 for a one seventh inch lens size.
Samples of the new devices will be available from February 2002 and mass production is slated to start in June 2002.