Fujitsu Microelectronics America (FMA) and Toshiba America Electronic Components (TAEC) have introduced a series of new Fast Cycle Random Access Memory (FCRAM) devices for high-speed networking, network server and Internet server applications.
This new generation of FCRAMs offers significant performance enhancements over the previous generation, achieving performance up to 200MHz, a random cycle time of 25 nsec and a bandwidth of 400Mbps.
While the FCRAM devices have been co-developed by Fujitsu and Toshiba, the companies will independently manufacture and market their own product lines based on the new design. It is anticipated that the common specifications will enable them to act as secondary sources for each other to provide a stable supply.
FCRAM technology combines DRAM densities with random cycle performance approaching Static Random Access Memory (SRAM) speeds. The FCRAM architecture offers fast random access and cycle times, and high bandwidth combined with a conventional Double Data Rate (DDR) interface using DRAM technology. In contrast to these enhanced second-generation FCRAM devices, the first-generation FCRAMs offer a random cycle time of 30ns and a bandwidth of 308Mbps.
The new devices, which are available in x8 and x16 configurations, were developed using 0.175 micron process technology. They are available with different functions including variable write length. The TSOP2 packaging offers a pin out and I/O interface compatible with standard DDR Synchronous Dynamic Random Access Memories (SDRAMs). Additional features include electrically selectable data input/output driver strength.