The Kopin Corporation looks as if it is one step closer to the commercial introduction of production-ready carbon-doped InP-based heterojunction bipolar transistor (HBT) wafers. Wireless handset designers could be the first beneficiaries.
Major results of recent research include record DC current gains as well as a frequency response that exceeded 120 GHz. All of the HBTs were grown in Kopin’s high-volume manufacturing environment using the company’s proprietary processes and organometallic chemical vapour deposition (OMCVD) production systems.
Asked about potential new applications for the technology, Dr. Fan, Kopin’s president and chief executive officer said, ‘Both the DC current gain and RF performance create exciting opportunities to use InP-based HBTs as power amplifiers in new wireless handsets. By virtue of their performance characteristics, these power amplifiers could be more power efficient and have lower operating voltages than the current generation of GaAs-based HBT power amplifiers.’
The research results announced in Japan last Friday at the International InP and Related Material Conference, come just three months after Kopin and its InP-based HBT partner Rockwell Science Center (RSC) announced a joint development agreement designed to speed introduction of InP-based HBTs for commercial applications.