NEC and the Himeji Institute of Technology claim to have developed a diffraction method that can define optical devices with greater accuracy than in the past.
Using the new high-resolution microbeam X-ray diffraction method, researchers were able to define the composition of quaternary alloy (InGaAsP) compound semiconductor layers with roughly 100 times more accuracy than by using traditional technologies.
By applying the results obtained, they were able to control crystal fabrication and lattice constants, thus improving the luminescent characteristics of elements in the devices by approximately 40%.
The results could potentially improve the characteristics of integrated optical elements used in WDM (Wavelength Division Multiplexing) optical communication networks resulting in a much higher transport capacity.
More information at http://www.nec.co.jp/english/today/newsrel