A bigger flash

Toshiba and SanDisk have developed a high density NAND flash memory cell structure that will allow 4-Gigabit NAND flash memory chips to be fabricated using 90-nanometre design rules.

Toshiba and SanDisk have developed a high density NAND flash memory cell structure that allows 4-Gigabit NAND flash memory chips to be fabricated using 90-nanometre (nm) design rules.

Toshiba and SanDisk plan to employ the new NAND cell technology starting in the first half of 2004 when they roll out their 2-Gigabit and 4-Gigabit NAND flash memory chips.

In the new NAND memory cell structure, the floating gate is completely self-aligned to the active area. This design characteristic means that the structure itself can be scaled below 90nm, an advantage over the current NAND memory cell structure, where scaling below 110 nanometres becomes difficult.

The devices will be manufactured by the company’s FlashVision Japan Joint Venture production facility located at Toshiba’s Yokkaichi plant in Japan.

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