High capacity memory for mobiles

Hynix Semiconductor has produced samples of 16M-bit and 32M-bit Pseudo SRAM targeted for the mobile handset market.

Manufactured using 0.18-micron process technology, the part is 100% interchangeable with standard SRAMs and low-power SRAMs.

The chips are offered with operational voltages of 2.5V, 3.0V, 2.3V-3.6V, power consumption of 100uA in waiting mode and speeds of 70ns and 85ns to meet the specific requirements of mobile phone applications.

It also features a 7mm x 8mm 48-ball FBGA (Fine Pitched Ball-Grid-Array) package, suitable for space constrained board designs. The chip adopts a ‘deep power down mode’, which reduces current consumption under 1uA.

Hynix has already provided die and packaged samples to major customers. Volume production will begin in the first quarter 2002 with an estimated market price of $5 dollars per 16Mb equivalent.

It is projected that the worldwide mobile handset market will reach 390 million units this year and grow more than 15%, reaching 460 million units next year. In particular, the demand for the chip is expected to surge in Asian markets, including Korea and Japan, as third generation service evolves.