Nanosys has entered into a collaborative agreement with Intel to investigate the use of nanotechnology in the development of memory devices.
Nanosys engineers have developed processes that allow them to synthesise inorganic semiconductor nanodots, nanorods and nanowire nanostructures. In addition, the same processes are capable of producing more complex shapes, such as cones, teardrops and tetrapods.
The company can also change the composition of the materials as they are grown, forming nano-heterostructures containing nano-sized heterojunctions. These junctions can be made atomically sharp, and defect-free allowing the production of electronics integrated directly within a single nanostructure. In contrast to traditional microelectronics, elements such as p-n diodes, p-i-n diodes, LEDs, bipolar transistors can be constructed chemically from the bottom up.
What is more, the company also has the ability to bind molecules such as proteins, antibodies, DNA or even small molecules to the nanowires to facilitate the creation of novel chemical and biological sensors. Perhaps more importantly for Intel, other molecular types can be bound to the same nanowires for applications in molecular memory and logic.
Intel Capital, the strategic investment group at Intel Corporation, participated in Nanosys’ $38M Second Round Financing that closed in May last year.