4Gb in a flash

Toshiba Corp has introduced what it describes as the semiconductor industry’s first 4Gb single-die, multi-level cell (MLC), NAND flash memory.

Toshiba America Electronic Components, Inc (TAEC), and its parent Toshiba Corp (Toshiba) has introduced the semiconductor industry’s first 4Gb single-die, multi-level cell (MLC), NAND flash memory. Toshiba also announced an 8Gb NAND flash memory IC (TH58NVG3D4BFT00) that stacks two of the 4Gb NAND flash memories in a single package.

Fabricated with 90-nanometer (nm) process technology, the new chip is said to offer double the capacity of Toshiba’s present largest single-die NAND flash memory, and will realise higher capacity flash memory cards capable of supporting a wide range of applications.

The new 4Gb NAND flash memory reportedly enables faster write performance by implementing advanced design concept and adjusting the control system of the memory cell. Samples of the new 4Gb NAND flash memory, TC58NVG2D4BFT00, will be available in April at a unit price of $113.00 and mass production is expected to begin in the third quarter of 2004 at a monthly capacity of 300,000 units.

The new 8Gb device is achieved by stacking the new 4Gb NAND flash memories in a single TSOP (Thin Small Outline Package), opening the way to more powerful applications that enhance the performance of digital consumer electronic devices while supporting their miniaturisation. Further, Toshiba plans to introduce a sample of 16Gb NAND flash memory IC that stacks four of the 4Gb NAND flash memories in a single package in the third quarter of 2004.

NAND flash memory offers high density, non-volatile data retention and is widely employed in flash memory cards and as embedded memory in digital consumer products, such as digital still cameras, PDAs, and multifunction cell phones. With the introduction of the new devices, Toshiba’s NAND flash memory component line-up will range from 128-megabit to 8Gb (stacked version) devices.

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