RF Micro Devices today introduced its family of linear power amplifier (PA) modules for CDMA applications, including 3V IS-95/CDMA 2000 1X handheld digital cellular equipment and spread-spectrum systems.
The RF3163, RF3164 and RF3165 PA modules are said to be manufactured on an advanced third-generation gallium arsenide heterojunction bipolar transistor (GaAs HBT) process.
Measuring 3x3x0.9mm, the PA modules are based upon RFMD’s patent pending Lead Frame Module (LFM) packaging technology. LFM packaging technology reportedly eliminates surface mount devices and the associated costs of surface mount device placement by integrating the functionality of passive components into the GaAs die manufactured by RFMD.
According to RF Micro Devices, products designed using LFM technology do not require laminate or low temperature co-fired ceramic (LTCC) substrates or surface mount components, which simplifies the production supply chain and decreases manufacturing lead time.
In addition to a profile of 0.9mm, the family of PAs offers ruggedness, thermal dissipation, moisture sensitivity level (MSL) and electrostatic discharge (ESD) sensitivity. The PA modules feature MSM-driven digital control lines to lower quiescent current for increased talk time in low power conditions. Self-contained with 50 ohm input and output, the PA modules are internally matched to obtain optimum power, efficiency and linearity.
The RF3163, RF3164 and RF3165 PA modules are assembled in an ultra-small, low profile 16-pin 3x3x0.9mm QFN packages that are thermally enhanced compared to traditional laminate based modules.
The PA modules are priced at $1.65 in quantities of 10,000 units. Sample quantities of the RF3163 are available now from RFMD. Sample quantities of the RF3164 and RF3165 are expected to be available in May 2004.