IBM announces eDRAM record

IBM has unveiled an on-chip memory technology that features the fastest access times ever recorded in eDRAM (embedded dynamic random access memory).



According to IBM, this technology, designed using the company’s Silicon-on-Insulator (SOI) for high performance at low power, vastly improves microprocessor performance in multi-core designs. This could speed the movement of graphics in gaming, networking, and other image intensive, multi-media applications.



The technology is expected to be a key feature of IBM’s 45nm microprocessor roadmap and will become available beginning in 2008.



IBM’s eDRAM technology was designed in stress-enabled 65nm SOI using deep trench, a DRAM production technology. The company says it dramatically improves on-processor memory performance in about one-third the space with one-fifth the standby power of conventional SRAM (static random access memory).