New LNA fits between 33 and 36 GHz

Rockwell Scientific, developers of GaAs and InP monolithic microwave integrated circuits, has introduced a Ka-band low noise amplifier (LNA) for use between 33 and 36 GHz.

Rockwell Scientific Company LLC (RSC) has introduced a Ka-band low noise amplifier (LNA) for use between 33 and 36 GHz. This PHEMT LNA, model KaLNA3s, has a minimum gain of 20 dB and maximum noise figure of less than 2.5 dB.

The three-stage amplifier has dc-decoupled 50- input and output impedances and a minimum output power of 8 dBm at the 1 dB gain compression point. Self-biased operation is possible with a single power supply by tying the gate terminal to ground.

The die size (1.5 x 0.7mm) is said to allow for extremely compact packaging. Each die is individually dc and rf tested and has a unique serial number written on the chip for traceability. Metal on the front and back sides is compatible with conventional die attach as well as thermosonic and thermocompression wire bonding assembly techniques. The KaLNA3s is fabricated using RSC’s ISO 9001 certified, 0.18 mm, fully passivated low-noise PHEMT process.

Besides use in military radar and communications systems, applications for the amplifier include VSAT terminals and commercial point-to-point and point-to-multipoint digital radio and wireless LAN communications. Parts are available qualified to commercial or MIL-B specifications.

The KaLNA3s is priced at $40 in quantities of 1000.

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