DARPA funds $9 million development deal

Sterling Semiconductor has been awarded contracts worth approximately $9 million by the US Department of Defence for the development of advanced silicon carbide semiconductors.

Uniroyal Technology Corporation has announced that its subsidiary, Sterling Semiconductor has been awarded contracts worth approximately $9 million with the US Department of Defence for the development of advanced silicon carbide (SiC) semiconductors.

The contracts are funded by the Defence Advanced Research Projects Agency (DARPA) for the development of improved 3 and 4-inch silicon carbide substrates, advanced SiC epitaxy, and SiC semiconductor devices.

The two-year contracts are said to include initiatives for the development of conducting substrates for high power electronics and semi-insulating substrates for high frequency electronics for communications and radar.

Sterling recently announced the introduction of its 3-inch diameter 6H-polytype silicon carbide substrates, which are reportedly a significant milestone in Sterling’s wafer development program.