Cree claims it has achieved another milestone in the development of silicon carbide (SiC) technology with the demonstration of 100mm, Zero-Micropipe (ZMP) n-type SiC substrates.
Micropipes, common crystalline defects in SiC, can decrease the number of usable electronic devices produced per wafer and affect performance parameters of each device produced.
Until now, these defects have been present in nearly all SiC wafers manufactured and sold by commercial substrate vendors. Through previous research and development efforts at Cree, partially funded by the US Army and DARPA, the density of these defects has been reduced. Cree’s current accomplishment demonstrates that it is possible to eliminate these defects in large-area wafers as well.
‘We expect that ZMP technology can significantly improve device yields, expand the range of products that can be designed and produced, and enable manufacturing at higher-volume levels than had been possible before,’ said Cengiz Balkas, Ph.D., Cree vice president and general manager for materials.
SiC is a high-performance semiconductor material used in the production of a range of power, light and communications components, including power- switching devices, light-emitting diodes (LEDs) and RF power transistors for wireless communications.