Honeywell has introduced a 150 nanometre, 15 million gate integrated circuit (IC) technology that is said to exponentially increase speed and bandwidth capabilities for processing and transmitting data in aerospace systems, including space satellites and networked battlefield systems.
Reducing the feature size of individual transistors to 150 nanometres reportedly allows designers to place nearly four times more transistors on an IC than previous generation technology, and increases data computing volume and speed.
Honeywell is also said to provide a production infrastructure that supports scalable volume foundry services for commercial and strategic, high-performance integrated circuits and systems-on-a-chip.
“We will be providing access to this long life-cycle technology through a reliable, on-shore trusted foundry source,” said Gary Kirchner, Director of Engineering and Technology, Defence & Space Electronic Systems, Honeywell.
Honeywell co-developed the Silicon-On-Insulator 150 nanometre technology with Cypress Semiconductor Corporation. Cypress will provide foundry services to Honeywell for initial 200-millimetre wafer production. The 150nm process will be ported to Honeywell’s 200 millimetre foundry, which is currently under construction near Minneapolis.
The Silicon-On-Insulator process is reaching manufacturing maturity for initial customer design prototyping.
Honeywell’s fabrication facility will begin producing radiation hardened 150-nanometre ICs in early 2005. An application specific integrated circuit (ASIC) cell library and design toolkit are available now for evaluation.