Toshiba America Electronic Components has developed a family of 128-megabit (Mb) Pseudo Static Random Access Memories (PSRAM) designed to meet the growing demand for higher density memory with low-power consumption for next-generation mobile systems.
Toshiba PSRAMs are said to combine the most desirable features of SRAM and Dynamic Random Access Memory (DRAM) to provide designers of wireless and portable communication products with an easy to use, low-power memory solution.
This latest generation of Toshiba PSRAMs is reportedly the highest density PSRAM available in the market with the lowest standby power consumption.
The devices feature an 8-word page access mode, enabling high-speed access and performance improvement. The devices also support partial array refresh and are capable of further reducing standby power consumption.
‘Toshiba offers the highest density PSRAMs available which makes them the perfect answer for memory-intensive, feature-rich mobile systems,’ said Paul Liu, senior manager of Communication Memory Products at TAEC. ‘The new design boosts performance while reducing power consumption and is rapidly making these features the most popular solution for next-generation wireless applications.’
The 128Mb PSRAM device designated TC51WHM716AXBN operates using a single power supply with a voltage range of 2.6 volts (V) to 3.3V for both core and input/output (I/O). The second 128Mb device, the TC51WKM716AXBN, supports 1.8V I/O. The devices have maximum standby current of 250 microamperes (µA), and support a deep power down mode with maximum current of 3µA.
The devices are packaged in 69-ball fine pitch ball grid array (FBGA), further reducing the board space requirements. In addition, Toshiba offers a space-saving stacked multi-chip package (MCP) which incorporates PSRAM with other memory product combinations including Static Random Access Memory (SRAM), NOR Flash and NAND Flash.