Infineon Technologies today unveiled its new SiGe:C (Silicon-Germanium Carbon) process technology for radio frequency (RF) semiconductor devices.
The SiGe:C technology is the foundation for Infineon’s latest generation of Heterojunction Bipolar Transistors (HBTs), which reportedly provide the world’s lowest noise figures for silicon-based discrete transistors of only 0.75dB at 6GHz and high gain of up to 19dB at 6GHz.
With the introduction of the new BFP740 HBT family, Infineon says it achieves silicon-based performance levels that could previously be attained only by using more expensive technologies based on gallium arsenide (GaAs).
The new SiGe:C transistors are suitable for use in a wide range of RF and wireless applications using frequencies above 10GHz, such as Low Noise Amplifiers (LNAs), microwave oscillators, and general-purpose amplifiers for various standards including Wireless LAN (802.11a, b, g), WiMAX, and Ultra Wide Band (UWB).
Applications encompass Global Positioning Systems (GPS), cordless phones, satellite TV LNBs (Low Noise Blocks), and satellite-based broadcast services such as XM Radio, Sirius, Digital Audio Broadcasting.
The new Infineon RF transistors have a typical transition frequency of 42GHz and provide the lowest noise figure levels currently available in the SiGe:C market: 0.5dB at 1.8GHz and 0.75dB at 6GHz, respectively.
Infineon says the BFP740 HBT series is in volume production and available in standard SOT343 (BFP740) packages, flatlead TSFP-4 (BFP740F) packages and ultra small 3-pin leadless TSLP-3 (BFR740L3) packages. The TSLP-3 package size is only 1.0mm x 0.6mm x 0.4mm.