Intel has produced what is believed to be the first fully functional SRAM (Static Random Access Memory) chip which has more than one billion transistors. Intel produced it using a new 45nm semiconductor manufacturing process.
The proof-of-concept SRAM chips demonstrate technology performance, process yield and chip reliability prior to developing processors and other logic chips using 45nm manufacturing process. Intel plans to manufacture chips with this technology in 2007 using 300mm wafers.
Bill Holt, vice president, general manger, Intel Technology and Manufacturing Group says, “Intel has a long history of translating technology leaps into tangible benefits that people appreciate. Our 45nm technology will provide the foundation for delivering PCs with improved performance-per-watt that will enhance the user experience.”
Intel’s 45nm process technology will allow chips with more than five times less power leakage than those made today. This will improve battery life for mobile devices and increase opportunities for building smaller, more powerful platforms.
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