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Oxford Instruments Plasma Technology (OIPT) has developed an enhanced version of its System 133 RIE-ICP380 tool.

The technology is an active spacer that improves the uniformity of the plasma across the electrode, giving excellent etch results both within wafer and cross batch, said the company.

It allows an increase in batch size from 20in x 2in GaN wafers to 27in x 2in, or 7in x 4in GaN and 18in x 2in Sapphire wafers.

‘OIPT’s new spacer offers uniformity tuning at will, which simplifies the process,’ said Dr Mark Dineen, principal applications engineer.

‘This allows enhanced process performance and higher throughput,’ he added.

The spacer can be retrofit to systems already deployed in the field.

OIPT’s System 133 Process Module is built on a 300mm platform, with multi-batch capability and with processes guaranteed to ensure rapid start up during installation.

It may be clustered to combine technologies and processes.

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