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Infineon Technologies has introduced a 30V power Mosfet with ultra-low R DS(on) for high-current automotive applications.

The Optimos-T2 30V Mosfet is an N-channel device with drain current of 180A and R DS(on) of 0.9mohms at 10V gate-to-source voltage.

The IPB180N03S4L-H0, which comes in a D2PAK-7 package, addresses customer needs for power Mosfets in standard packages offering both high nominal currents and low R DS(on) at low cost.

Based on the second generation of Infineon’s trench technology for power Mosfets, the Optimos-T2 device is suitable for high-current automotive motor drive applications, electric power steering (EPS) and start/stop functionality.

Power Mosfet trench technologies, such as Optimos-T2, are said to exhibit improvements in both R DS(on) and gate charge compared to previous technology.

The high-current Powerbond technology from Infineon addresses the wirebond limitations in a Mosfet, reducing the R DS(on) drop of the wirebond and increasing the current capability.

This also enhances reliability by keeping the wirebonds cooler.

The latest Powerbond technology enables up to four double-stitch 500um wirebonds in a single Mosfet, which permits 180A current rating in a standard package.

Optimos-T2 technologies are designed to sustain 260C during reflow soldering at MSL1 (Moisture Level 1) and have lead-free plating for RoHS compliance.

The IPB180N03S4L-H0 power Mosfet is fully qualified according to the specifications of Automotive Electronics Council (AEC-Q101).

Infineon said that its advanced trench technology provides low gate charge, low capacitance, low switching losses and excellent FoM to deliver electrical motor efficiency while minimising EMC emissions.

In addition, an optimised gate charge enables smaller driver output stages.

The IPB180N03S4L-H0 addresses high-current applications (more than 500A) where the operation of many Mosfets in parallel is required.

As the IPB180N03S4L-H0 provides 180A nominal current, it allows the reduction of the required number of parallel Mosfets by one for high-current systems to optimise current sharing, thermal behaviour and costs.

As automotive electric motors move to pulse width modulation (PWM) control to increase efficiency, Optimos-T2 30V products can also provide battery protection through reverse connection.

The 30V IPB180N03S4L-H0 device with 180A drain current and an R DS(on) of 0.9mohms has been released for volume production.

Infineon offers a variant with 30V/180A (IPB180N03S4L-01) providing an R DS(on) of 1.05mohms at 10V gate-to-source voltage for cost-critical applications.

Both high-power Mosfets are available in a standard D 2PAK-7 package.

Infineon Technologies

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