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Peregrine has announced a joint development agreement with IBM for the development and manufacture of future generations of Peregrine’s UltraCMOS silicon-on-sapphire (SOS) process technology.

The technology delivers RF performance and monolithic integration for high-growth applications such as the RF front end of mobile phones and multi-mode, multi-band mobile wireless devices; broadband communications including 4G LTE equipment and base stations; mobile DTV/CATV RF signal conditioning; and space satellite systems.

The system is said to be the industry’s highest-performance radio-frequency complementary metal-oxide semiconductor (RF CMOS) process.

When fully qualified, the next-generation UltraCMOS RF ICs will be manufactured by IBM for Peregrine in the jointly developed 180nm process.

IBM adds Peregrine’s UltraCMOS technology to its advanced semiconductor processing capability.

This development marks the first commercial use of 200mm (8in) wafer processing for silicon-on-sapphire process – a patented variation of silicon-on-insulator (SOI) technology that incorporates an ultra-thin layer of silicon on a highly insulating sapphire substrate.

Migration to 200mm wafers facilitates the evolution of the process to advanced 180, 130 and 90nm nodes.

It also provides access to advanced manufacturing toolsets and enables significantly expanded digital integration capability.

Peregrine Semiconductor

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