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Vishay Intertechnology has announced a tiny 20V n-channel power Mosfet plus Schottky diode.

Featuring the 1.6mm x 1.6mm thermally-enhanced Powerpak SC-75 package, the SiB800EDK combines a Schottky diode with a low forward voltage of 0.32V at 100mA and a Mosfet with on-resistance ratings specified at gate drives down to 1.5V.

With its ultra-compact footprint, the SiB800EDK is 36 per cent smaller than devices in 2mm x 2mm packages, while offering an ultra-thin 0.75mm profile.

The inclusion of a trench Schottky keeps the forward voltage low, reducing voltage drop in level shift applications.

The SiB800EDK offers on-resistance values from 0.960 ohms at 1.5V VGS to 0.225 ohms at 4.5V VGS.

The low on-resistance rating at 1.5V allows the Mosfet to be used with signals at low levels.

Typical applications for the device will include level shift switching in I2C interface and boost converters in portable devices such as mobile phones, PDAs, digital cameras, MP3 players and smart phones.

The SiB800EDK features ESD protection and is 100 per cent lead-free, halogen-free and RoHS-compliant.

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