Cambridge GaN Devices secures $32m

Cambridge GaN Devices (CGD) is a fabless semiconductor company developing a range of energy-efficient GaN-based power devices that provide faster switching speeds, lower energy consumption, and more compact designs than traditional silicon-based solutions.

The Cambridge University spinout says its proprietary monolithic ICeGaN technology - which simplifies the implementation of GaN into existing and progressive designs - delivers efficiency levels exceeding 99 per cent, enabling energy savings of up to 50 per cent in high-power applications including electric vehicles and data centre power supplies.

In a statement, Dr Giorgia Longobardi, CEO and Founder of CGD, said: "This funding round marks a pivotal moment for CGD. It validates our technology and vision to revolutionise the power electronics industry with our efficient GaN solutions and make sustainable power electronics possible.”

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The global GaN power device market is projected to grow at a CAGR of 41 per cent, reaching $2bn by 2029. Simultaneously, ICeGaN is being seen as a viable alternative to existing solutions using Silicon Carbide (SiC), combining high energy efficiency, miniaturisation, and monolithically integrated smart functionalities.