Electronic devices given 20 year memory boost

Researchers from the National University of Singapore’s Faculty of Engineering have developed a new Magnetoresistive Random Access Memory (MRAM) technology that is claimed to boost information storage in electronic systems. 

Led by Dr Yang Hyunsoo, the team developed a new device structure useful for the next generation MRAM chip which can potentially be applied to enhance the user experience in consumer electronics.

The new technology, subject to a provisional US patent, can also be applied in transportation, military and avionics systems, industrial motor control and robotics, industrial power and energy management as well as health care electronics.

In a statement, Dr Hyunsoo said, ‘From the consumer’s standpoint, we will no longer need to wait for our computers or laptops to boot up. Storage space will increase, and memory will be so enhanced that there is no need to regularly hit the ‘save’ button as fresh data will stay intact even in the case of a power failure. Devices and equipment can now have bigger memory with no loss for at least 20 years or probably more. Currently pursued schemes with a very thin magnetic layer can only retain information for about a year.

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