Gold standard for future electronic devices

Vikas Berry, William H. Honstead professor of chemical engineering, and his research team have studied a three-atom-thick material - molybdenum disulfide - and found that manipulating it with gold atoms improves its electrical characteristics. Their research appears in a recent issue of Nano Letters.

The research may advance transistors, photodetectors, sensors and thermally conductive coatings, Berry said in a statement. It could also produce ultrafast, ultrathin logic and plasmonics devices.

Berry’s laboratory has been active in the advancement of synthesis and properties of several next-generation atomically thick nanomaterials, such as graphene and boron-nitride layers, which have been applied for sensitive detection, high-rectifying electronics, mechanically strong composites and novel bionanotechnology applications.

‘Futuristically, these atomically thick structures have the potential to revolutionise electronics by evolving into devices that will be only a few atoms thick,’ Berry said.

For the latest research, Berry and his team focused on transistors based on molybdenum disulfide (MoS2), which was isolated two years ago. The material is made of three-atom-thick sheets and has recently shown to have transistor-rectification that is better than graphene, a single-atom-thick sheet of carbon atoms.