Graphene memory tech could cut data centre energy use

Cambridgeshire-based Paragraf, a UK company pioneering the mass production of graphene-based electronics with standard semiconductor processes, has been awarded the grant of £419,419 to produce a proof-of-concept prototype memory technology using a new class of ferroelectric materials complemented with graphene on a silicon platform.

The joint grant will also see Professor Judith Driscoll’s research group at Cambridge University’s Department of Materials Science and Metallurgy receive £299,198 to develop processes for depositing ferroelectric materials on top of Paragraf’s transfer-free graphene to produce novel memory devices, including a graphene-ferroelectric field effect transistor (G-FeFET).

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According to Paragraf, this is expected to lead to power savings of an order of magnitude relative to existing memory device technology, which is key to saving power in data centres and consumer devices.

“Working with Paragraf on an important project like this is an exciting prospect, particularly in light of their connection to this department,” Prof Driscoll said in a statement. “The chance to develop such an important, next-generation memory device here in Cambridge, with a company so deeply tied to the area, is important to maintaining this region’s – and the UK’s – leadership in the tech industry in the 21st Century.”