Graphene-related material has role in transistors
Scientists at Liverpool University have created a new, graphene-related material that has the potential to improve transistors used in electronic devices.

The new material, triazine-based graphitic carbon nitride (TGCN), was predicted theoretically in 1996 and has been fabricated for the first time at the university.
Graphene is one atom thick, strong and conducts heat and electricity highly efficiently. The new TGCN material is also two-dimensional, but it has an electronic band gap, making it potentially suitable for use in transistors.
Transistors are currently made of silicon that generates heat when used in electronic devices. Scientists have been looking for a material that is carbon-based and that has the electronic band gap needed for use as a semiconductor.
In a statement, Prof Andrew Cooper, a chemist from the University’s Department of Chemistry, said: ‘This is an exciting result because there are relatively few ordered two-dimensional organic solids. Finding a new member of the graphene family is very significant.’
Starting with the molecule dicyandiamide, the team prepared crystals of graphitic carbon nitride, a two-dimensional layered material that is similar to graphene that contains nitrogen.
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