Graphene sees more light with silicon carbide substrate

Their findings, detailed in a research paper appearing in Nature Nanotechnology, overcome the limitations of graphene-based photodetectors that only have a small area that is sensitive to light, thereby limiting their performance.

By combining graphene with a comparatively much larger silicon carbide substrate, the researchers at Purdue University, the University of Michigan and Pennsylvania State University created graphene field-effect transistors – GFETs – that can be activated by light.

High-performance photodetectors might be useful for applications including high-speed communications and ultra-sensitive cameras for astrophysics, plus sensing applications and wearable electronics. Arrays of the graphene-based transistors might bring high-resolution imaging and displays.

“In most cameras you need lots of pixels,” said Igor Jovanovic, a professor of nuclear engineering and radiological sciences at the University of Michigan. “However, our approach could make possible a very sensitive camera where you have relatively few pixels but still have high resolution.”