More lasers lighten lithography

A method of multiplexing lasers to increase the available power is set to develop Extreme Ultraviolet Lithography (EUVL) source into a workable solution for high volume manufacture of semiconductor chips.

Researchers have for the first time used multiple lasers to generate a Laser Produced Plasma (LPP) EUV light source, a promising technology for producing semiconductor chips with 32nm or better accuracy.

Powerlase, manufacturers of powerful nanosecond Q-switched, diode-pumped solid state (DPSS) lasers, and the University of Central Florida (UCF) began collaborative research into EUVL in September last year. The initial phase demonstrated that Powerlase's kilowatt-class Starlase lasers could generate high conversion efficiency into an EUV source with a single laser generating 10W of power at the target.

Dr Samir Ellwi, Powerlase’s Vice President of Strategic Innovations, said, 'We decided to build on this success with a second phase with the purpose of doubling the EUV power. We have more than doubled the output to 23W, which has the major benefit of increasing the power scalability of the LPP EUV approach.'