Protonation of indium selenide could lead to high-performance memory devices
Ultralow power, high-capacity computer chips could be enabled following the development of a proton-driven approach that enables multiple ferroelectric phase transitions.
Developed at KAUST (King Abdullah University of Science and Technology), the proton-mediated approach shows potential for high-performance neuromorphic computing chips. The team’s findings are detailed in Science Advances.
Ferroelectrics, such as indium selenide, switch polarity when placed in an electric field, which makes them suited for memory technologies. In addition to requiring low operating voltages, the resulting memory devices display favourable maximum read/write endurance and write speeds, but their storage capacity is low. This is because existing methods can only trigger a few ferroelectric phases, and capturing these phases is experimentally challenging, said Xin He, who co-led the study under the guidance of Fei Xue and Xixiang Zhang.
The method devised at KAUST relies on the protonation of indium selenide to generate a multitude of ferroelectric phases. The researchers incorporated the ferroelectric material in a transistor consisting of a silicon-supported stacked heterostructure for evaluation.
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