Researchers create functional oxide thin films for electronics

The development is expected to lead to an array of high-power devices and smart sensors.

According to a statement, the research marks the first time that researchers have been able to produce positively charged (p-type) conduction and negatively charged (n-type) conduction in a single oxide material, launching a new era in oxide electronics.

P-n junctions (where the positively and negatively charged materials meet) are required to make functional electronic devices. Solid-state silicon electronics achieved this decades ago, but are limited by the amount of power and temperature they can handle. Oxide materials are an attractive alternative to silicon because they can handle more power.

However, attempts to pair different p-type and n-type oxide materials previously ran into problems at the interface of the two materials.

‘We avoided this problem by using the same material for p- and n-type conduction,’ said Dr Jay Narayan, the John C Fan distinguished chair professor of materials science and engineering at NC State and co-author of a paper describing the research. ‘This is a new era in oxide electronics.’