STMicroelectronics and IBM have signed an agreement to collaborate on the development of next-generation process technology used in semiconductor development and manufacturing.
Financial details of the deal were not disclosed.
The agreement includes 32nm and 22nm complementary metal–oxide–semiconductor (CMOS) process-technology development, design enablement and advanced research adapted to the manufacturing of 300mm silicon wafers. In addition, it includes the core bulk CMOS technology and value-added derivative System-on-Chip (SoC) technologies.
As part of the agreement, ST will establish a research and development team in IBM’s Semiconductor Research and Development Centre in East Fishkill and Albany, New York. IBM will establish a research and development team at ST’s facility in Crolles, France.
The two companies will jointly develop a variety of value-added derivative technologies, such as embedded memory and analogue/RF. These technologies can be broadly applied in consumer and server markets and in wireless applications, such as cell phones and global positioning devices.
The new agreement will see collaboration between IBM and ST on IP development and platforms to speed the design of SoC devices in these technologies. The project will also include other members of IBM’s CMOS technology alliance interested in the same technologies.
‘The addition of STMicroelectronics to the IBM technology alliance continues to strengthen our ability to address the semiconductor industry’s technical and economic challenges inherent in developing advanced technologies,’ commented John E. Kelly III, senior vice president, IBM Research. ‘Our joint expertise and cooperative efforts with ST will help enhance process development efforts while also delivering faster time to market and greater technology advantage to our clients.’
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