DARPA funds Gallium Nitride research

TriQuint Semiconductor has been awarded a multi-year contract from the US Defense Advanced Research Projects Agency to develop high power wide band amplifiers in gallium nitride.


TriQuint Semiconductor has been awarded a multi-year contract from the US Defense Advanced Research Projects Agency (DARPA) to develop high power wide band amplifiers in gallium nitride.


Gallium nitride High Electron Mobility Transistor (HEMT) devices provide the higher power density and efficiency required for high power phased array radar, electronic warfare, missile seeker and communications systems.


The contract is in two phases. In the first phase, lasting three years and valued at $15.8 million, Triquint aims to develop gallium nitride material and devices. In the second optional phase, which covers years four and five and is valued at $15.9 million, the company will develop gallium nitride high power, wide band amplifiers and packaging.


TriQuint is teamed with BAE Systems, Emcore Corporation, II-VI Incorporated, Lockheed Martin and Nitronex on the program. University partners Dr. Michael Shur of Rensselaer Polytechnic Institute and Dr. Jesus del Alamo of the Massachusetts Institute of Technology are also participating.


TriQuint has worked with gallium nitride since 1999 under the sponsorship of Lockheed Martin as well as its own funding.