Micron Technology has introduced a new memory device designed for low-density, entry-level mobile handsets.
Micron’s new device, a x16 burst A/D multiplexed pseudo-SRAM (PSRAM) enhanced CellularRAM device, features combined address and data pins used for both READ and WRITE functions.
With more than a 30% pin count reduction, manufacturers can simplify their controller design resulting in an overall reduced system cost. The device is available in bare die form that enables designers to maximise board space and reduce substrate complexity.
Micron’s PSRAM is available now for general customer sampling in 64 Mbit, 32Mbit and 16Mbit densities.
Volume production is expected during the first quarter of 2006.
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