Low-noise amplifier can detect radiation traces

A fundamental property for the first microwave amplifier in the radio receiver is its noise figure, which is normally given in decibels (dB). A typical noise figure for low-noise amplifiers in mobile communication systems is tenths of a decibel.

Last year, Chalmers reported a world record for a low-noise amplifier in the journal Electron Device Letters. The amplifier exhibited a minimum noise figure of 0.018dB across a bandwidth of 4-8GHz. However, since the low-noise amplifier was designed in a hybrid solution, scaling up to larger quantities turned out to be difficult.

Chalmers, in collaboration with a company called Low-Noise Factory, has now published an article on an integrated ultra-low-noise amplifier.

According to Chalmers, the scientists have developed an indium phosphide-based process for high electron mobility transistors (HEMT). Transistors and other semiconductor components have been fabricated on a monolithic chip on an indium phosphide wafer. All parts of the design such as semiconductor layers, components, process and circuit design have been optimised for the lowest noise performance.